DocumentCode :
1461903
Title :
Analysis and optimization of polarization-insensitive semiconductor optical amplifiers with delta-strained quantum wells
Author :
Cho, Yong-Sang ; Choi, Woo-Young
Author_Institution :
Dept. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea
Volume :
37
Issue :
4
fYear :
2001
fDate :
4/1/2001 12:00:00 AM
Firstpage :
574
Lastpage :
579
Abstract :
Polarization sensitivity of semiconductor optical amplifiers (SOAs) with delta-strained quantum-well (QW) structures is investigated. The valence band structures and TE, TM optical gain spectra are calculated for the various delta-strained QW structures. It is shown that the number and location of the delta layers affect the polarization dependence of the delta-strained quantum well SOA signal gains. The optimal delta-strained QW structure for the SOA application is identified and its theoretical verification is provided
Keywords :
light polarisation; quantum well lasers; semiconductor optical amplifiers; valence bands; SOA; SOA signal gains; TE optical gain spectra; TM optical gain spectra; delta-strained quantum wells; optimization; polarization dependence; polarization sensitivity; polarization-insensitive semiconductor optical amplifiers; valence band structures; Fiber nonlinear optics; Nonlinear optics; Optical mixing; Optical polarization; Optical sensors; Optical signal processing; Optical waveguides; Semiconductor optical amplifiers; Stimulated emission; Tellurium;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.914407
Filename :
914407
Link To Document :
بازگشت