Threshold current analysis of distributed feedback organic semiconductor lasers

Author

Barlow, G.F. ; Shore, K.A.

Author_Institution

Sch. of Inf., Univ. of Wales, Bangor, UK

Volume

148

Issue

1

fYear

2001

fDate

6/23/1905 12:00:00 AM

Firstpage

2

Lastpage

6

Abstract

The relationship between the exciton density and material gain in an Alq₃:DCM organic semiconductor laser material is estimated by a comparison between published experimental data and the results of a static analysis of organic semiconductor distributed feedback lasers. The gain coefficient for an Alq₃:DCM laser material operating at 640 nm is estimated to be of order 1×10^-18 cm². This value is used to perform a threshold current optimisation of a double heterostructure (DH) organic semiconductor laser utilising a substrate grating for distributed feedback. It is found that the threshold current density can be reduced by approximately 35% by such an optimisation. The minimum threshold current density for a 2 cm long device is estimated to be about 50 A cm^-2

Keywords

current density; diffraction gratings; distributed feedback lasers; dye lasers; excitons; laser theory; organic semiconductors; semiconductor lasers; (4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran); (tris-(8 -hydroxyquinolene) aluminium); 2 cm; 640 nm; Alq₃:DCM organic semiconductor laser material; DH organic semiconductor laser; double heterostructure; exciton density; gain coefficient; low molecular weight organocrystalline molecule; material gain; organic molecular dye; organic semiconductor distributed feedback lasers; static analysis; substrate grating; threshold current density; threshold current optimisation;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:20010132

Filename

914414