Effect of Top Electrode Materials on the Nonvolatile Resistive Switching Characteristics of CCTO Films

Author

Lin, Chun-Chieh ; Chang, Yi-Peng ; Ho, Chia-Cheng ; Shen, Yu-Shu ; Chiou, Bi-Shiou

Author_Institution

Dept. of Electr. Eng., Nat. Dong Hwa Univ., Hualien, Taiwan

Volume

47

Issue

3

fYear

2011

fDate

3/1/2011 12:00:00 AM

Firstpage

633

Lastpage

636

Abstract

A novel material CaCu₃Ti₄O₁₂ (CCTO) for resistive random access memory (RRAM) application was prepared by sol-gel spin coating method. Our previous studies indicated that the CCTO possesses stable resistive switching behavior. In this work, the effects of the top electrode (TE) material on the resistive switching characteristics of CCTO films are investigated. It indicates the work function of the TE is an important factor on the resistive switching properties. Successive resistive switching was observed for electrode materials of Ni, Pd, and Pt. Furthermore, optimized consideration of the electrode material for RRAM is also studied.

Keywords

calcium compounds; copper compounds; electrodes; magnetic switching; magnetic thin films; sol-gel processing; spin coating; work function; CaCu₃Ti₄O₁₂; nonvolatile resistive switching properties; resistive random access memory; sol-gel spin-coating method; top electrode material; work function; Copper; Electrodes; Nickel; Nonvolatile memory; Silicon; Switches; Electrodes; nonvolatile memory; resistive random access memory; work function;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2010.2101584

Filename

5721868