DocumentCode :
1462081
Title :
Improved neuron MOS-transistor structures for integrated neural network circuits
Author :
Rantala, A. ; Franssila, S. ; Kaski, K. ; Lampinen, J. ; Åberg, M. ; Kuivalainen, P.
Author_Institution :
VTT Electron., Finland
Volume :
148
Issue :
1
fYear :
2001
fDate :
2/1/2001 12:00:00 AM
Firstpage :
25
Lastpage :
34
Abstract :
The neuron MOS transistor is a recently discovered device which is capable of executing a weighted sum calculation of multiple input signals and threshold operation based on the result of summation, thereby simulating the function of biological neurons. A comprehensive set of neuron test transistors has been designed, where a number of input gates are coupled capacitively to a floating gate, which controls the channel current. Integrated circuits for neural network applications have also been designed, based on the neuron MOS transistors. These circuits include neuron CMOS inverters and A/D and D/A converters. To increase the accuracy of the neuron MOSFET structures, calibration techniques are proposed and tested. All the test structures and circuits are implemented by using a standard 0.8 μm double-polysilicon CMOS technology. Attention was paid to saving the layout area and reducing power consumption
Keywords :
CMOS integrated circuits; ULSI; calibration; integrated circuit layout; neural chips; 0.8 micron; A/D converters; CMOS inverters; D/A converters; calibration techniques; channel current; double-polysilicon CMOS technology; floating gate; input gates; integrated neural network circuits; layout area; multiple input signals; neuron MOS-transistor structures; power consumption; threshold operation; weighted sum calculation;
fLanguage :
English
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
Publisher :
iet
ISSN :
1350-2409
Type :
jour
DOI :
10.1049/ip-cds:20010055
Filename :
914434
Link To Document :
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