Electrothermal model of GaAs FET devices for fast PC implementation

Author

Pesare, M. ; Giorgio, A. ; Pern, A.G.

Author_Institution

Dipt. di Elettrotecnica ed Electron., Politecnico di Bari, Italy

Volume

148

Issue

1

fYear

2001

fDate

2/1/2001 12:00:00 AM

Firstpage

40

Lastpage

44

Abstract

An electrothermal model of GaAs FET devices is proposed for an easy, fast and reliable layout design using a personal computer. The contributions to the temperature increase and total thermal resistance of the attachment layer, mounting, metallisations and coating layers, and convection effect are taken into account. The feedback between FET current and channel temperature has also been considered. The simulation can evaluate the thermal field, current distribution, thermal resistance, and the minimum distance between two contiguous devices to minimise the mutual thermal coupling. A comparison has been carried out with the finite-difference technique and experimental results for a wide range of dissipated power in a MESFET device, and good agreement has been observed

Keywords

III-V semiconductors; Schottky gate field effect transistors; finite difference methods; gallium arsenide; semiconductor device models; thermal resistance; GaAs; GaAs FET device; MESFET; attachment layer; channel temperature; coating layer; computer simulation; convection; current distribution; electrothermal model; finite difference method; layout design; metallisation; mounting; personal computer; power dissipation; thermal coupling; thermal field; thermal resistance;

fLanguage

English

Journal_Title

Circuits, Devices and Systems, IEE Proceedings -

Publisher

iet

ISSN

1350-2409

Type

jour

DOI

10.1049/ip-cds:20010173

Filename

914436