DocumentCode :
1462153
Title :
Improving Impact Toughness of BGA Lead-Free Solder Joints by Using Higher Current Density in Electrolytic Ni Plating
Author :
Yamamoto, Kenichi ; Kawamura, Toshinori ; Nakano, Hiroshi ; Akahoshi, Haruo ; Satoh, Ryohei
Author_Institution :
Jisso & Test Technol. Dev. Div., Renesas Electron. Corp., Tokyo, Japan
Volume :
1
Issue :
1
fYear :
2011
Firstpage :
16
Lastpage :
24
Abstract :
Improving the toughness against impact of an electrolytically plated (Ni/Au) Sn-3 mass%Ag-0.5 mass%Cu solder joint for a ball grid array package was examined. The concentration of impurities (C, O, S, and Cl) that reduce the toughness against impact of Ni plating is shown to be inversely proportional to the rate of Ni deposition. The constant of proportionality becomes the rate of adsorption of impurities and depends on how clean the plating bath is. These results indicate that the concentration of impurities in Ni plating can be controlled by the rate of deposition (or current density). Creating the plating at a higher current density from a depth of about 1 μm from the finished surface is shown to improve the toughness against impact of solder joints formed with the combination of Ni plating and Sn-3 mass%Ag-0.5 mass%Cu solder. This method improves toughness against impact while suppressing variation in thickness of the Ni plating.
Keywords :
adsorption; ball grid arrays; copper alloys; current density; electroplating; gold alloys; impact (mechanical); nickel alloys; silver alloys; solders; tin alloys; BGA lead-free solder joints; Ni deposition; NiAu; SnAgCu; adsorption; ball grid array package; current density; deposition rate; electrolytic Ni plating; electrolytically plated solder joint; impact toughness; impurities concentration; plating bath; Current density; Impurities; Lead; Nickel; Soldering; Strain; Substrates; Ball grid array; Sn–Ag–Cu; current density; electroplated Ni/Au; impact toughness; impurities; lead-free solder;
fLanguage :
English
Journal_Title :
Components, Packaging and Manufacturing Technology, IEEE Transactions on
Publisher :
ieee
ISSN :
2156-3950
Type :
jour
DOI :
10.1109/TCPMT.2010.2095290
Filename :
5721895
Link To Document :
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