Title :
Radiation damage studies of silicon microstrip sensors
Author :
Nakayama, T. ; Arai, S. ; Hara, K. ; Shimojima, M. ; Ikegami, Y. ; Iwata, Y. ; Johansen, L.G. ; Kobayashi, H. ; Kohriki, T. ; Kondo, T. ; Nakano, I. ; Ohsugi, T. ; Riedler, P. ; Roe, S. ; Stapnes, S. ; Stugu, B. ; Takashima, R. ; Tanizaki, K. ; Terada, S.
Author_Institution :
Inst. of Phys., Tsukuba Univ., Ibaraki, Japan
fDate :
12/1/2000 12:00:00 AM
Abstract :
Various types of large area silicon microstrip detectors were fabricated for the development of radiation-tolerant detectors that will operate in the LHC ATLAS SCT. The detectors were irradiated with 12-GeV protons at KEK to fluences of 1.7×1014 and 4.2×10 14 protons/cm2. Irradiated samples included n-on-n detectors with 4 kΩcm bulk resistivity and p-on-n detectors with 1 kΩcm and 4 kΩcm bulk resistivities. Four patterns of p-stop structures are configured in the n-on-n detectors. Although Hamamatsu fabricated most of the detectors, p-on-n detectors by SINTEF are also included, as well as those fabricated in a modified process by Hamamatsu. The detector performances after irradiation that are compared are the probability of creation of faulty coupling capacitors, C-V characteristics, charge curves, and total leakage current. The p-on-n are similar to the n-on-n detectors in these performances, and will remain operational in the ATLAS radiation environment
Keywords :
position sensitive particle detectors; proton detection; proton effects; radiation hardening; silicon radiation detectors; 12 GeV; C-V characteristics; LHC ATLAS SCT; Si; Si microstrip sensors; charge curves; large area microstrip detectors; n-on-n detectors; p-on-n detectors; p-stop structures; proton; radiation damage studies; radiation-tolerant detectors; total leakage current; Capacitance-voltage characteristics; Capacitors; Conductivity; Fault detection; Large Hadron Collider; Leak detection; Microstrip; Protons; Radiation detectors; Silicon radiation detectors;
Journal_Title :
Nuclear Science, IEEE Transactions on
