$\\hbox {In}_{0.46}\\hbox {Ga}_{0.54}\\hbox {P}_{0.98} \\hbox {Sb}_{0.02}/\\hbox {GaAs}$ : Its Band Offset and Application to Heterojunction Bipolar Transistor

Author

Chin, Yu-Chung ; Lin, Hao-Hsiung ; Huang, Chao-Hsing ; Tseng, Min-Nan

Author_Institution

Grad. Inst. of Electron. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

31

Issue

5

fYear

2010

fDate

5/1/2010 12:00:00 AM

Firstpage

434

Lastpage

436

Abstract

We report on the band alignment of In_0.46Ga_0.54 P_0.98Sb_0.02/GaAs and the dc characteristics of In_0.46Ga_0.54P_0.98Sb_0.02/GaAs heterojunction bipolar transistors (HBTs). By comparing the forward and reverse Gummel plot, we found a potential spike existing at the InGaPSb/GaAs interface. Through a flatband extrapolation from the currents of the forward and reverse Gummel plot and the energy gap determined from photoluminescence, we concluded that In_0.46Ga_0.54P_0.98Sb_0.02/GaAs is in a type-I band alignment. The conduction-band offset and valence-band offset are 0.12 and 0.35 eV, respectively. As a result of the type-I band alignment, the InGaPSb/GaAs HBTs showed a more significant thermal degradation of the current gain than the control InGaP/GaAs HBT. The thermal behavior is beneficial to ruggedness.

Keywords

III-V semiconductors; energy gap; extrapolation; gallium arsenide; heterojunction bipolar transistors; indium compounds; photoluminescence; Gummel plot; HBT; InGaPSb-GaAs; conduction-band offset; current gain; dc characteristics; energy gap; flatband extrapolation; heterojunction bipolar transistor; photoluminescence; thermal behavior; thermal degradation; type-I band alignment; valence-band offset; Band offset; InGaPSb; heterojunction bipolar transistor (HBT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2044361

Filename

5443453