DocumentCode :
1462309
Title :
A Comprehensive LER-Aware TDDB Lifetime Model for Advanced Cu Interconnects
Author :
Stucchi, Michele ; Roussel, Philippe J. ; Tökei, Zsolt ; Demuynck, Steven ; Groeseneken, Guido
Author_Institution :
IMEC, Leuven, Belgium
Volume :
11
Issue :
2
fYear :
2011
fDate :
6/1/2011 12:00:00 AM
Firstpage :
278
Lastpage :
289
Abstract :
A time-dependent dielectric breakdown (TDDB) lifetime model predicting the impact of line-edge roughness (LER) on Cu interconnect reliability is proposed. The structure, validity, and accuracy of the model are evaluated and discussed. The model is applied to an interconnect scaling scenario that includes conventional patterning and spacer-defined patterning of nanometer-scale Cu wires. LER-aware TDDB lifetime predictions are obtained from the model, and consequent recommendations on how to improve the TDDB lifetime of future interconnects are derived.
Keywords :
copper; electric breakdown; integrated circuit interconnections; integrated circuit reliability; nanowires; Cu; copper interconnects; interconnect scaling; line-edge roughness; nanometer-scale wires; reliability; spacer-defined patterning; time-dependent dielectric breakdown lifetime model; Approximation methods; Copper; Dielectrics; Fitting; Predictive models; Reliability; Wires; Cu interconnects; lifetime prediction; line-edge roughness (LER); time-dependent dielectric breakdown (TDDB);
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2011.2121909
Filename :
5722027
Link To Document :
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