Title :
Proposal for a new room temperature X-ray detector-thallium lead iodide
Author_Institution :
Eur. Synchrotron Radiat. Facility, Grenoble, France
fDate :
12/1/2000 12:00:00 AM
Abstract :
Numerous compounds have been considered for room temperature semiconductor detector applications. Most of them however are difficult to obtain as crystals and to handle. TlPbI3 is a promising candidate, because it forms rhombohedral crystals which do not have a structural phase transition between room temperature and their melting point. Its low vapour pressure facilitates the crystal growth and it has a low melting point (619 K), high Z, high density (6.6 g/cm3), and a bandgap of 2.3 eV. X-ray photoconductivity measurements indicate that this material can be used in room temperature solid state detectors
Keywords :
X-ray detection; photoconductivity; semiconductor counters; TlPbI3; TlPbI3 detector; X-ray detector; X-ray photoconductivity; bandgap; crystal growth; density; melting point; room temperature semiconductor detector; vapour pressure; Crystalline materials; Crystals; Photoconducting materials; Photoconductivity; Photonic band gap; Proposals; Solid state circuits; Temperature; X-ray detection; X-ray detectors;
Journal_Title :
Nuclear Science, IEEE Transactions on