Title :
Fabrication and Characterization of Networked Graphene Devices Based on Ultralarge Single-Layer Graphene Sheets
Author :
Dong, Xiaochen ; Huang, Wei ; Chen, Peng
Author_Institution :
Key Lab. for Org. Electron. & Inf. Displays, Nanjing Univ. of Posts & Telecommun., Nanjing, China
fDate :
5/1/2011 12:00:00 AM
Abstract :
Ultralarge-scale single-layer graphene (SLG) sheets are obtained by chemically reduction process in aqueous media. The resulting SLG sheets are investigated by atomic force microscopy (AFM), Raman spectroscopy, X-ray photoelectron spectroscopic. Based on the ultralarge SLG sheets, the graphene FETs are fabricated using SLG sheets and networked graphene (NW) sheets, respectively. The electrical characterizations indicate that the NW devices exhibit higher carrier mobility as compared to SLG devices. Moreover, the subsequent thermal annealing process further improves the effective hole mobility to ~0.55 cm2 /V·s. This study demonstrates a simple way to obtain graphene transistors with high mobility, which provides a promising application in printable graphene-based nanoelectronics.
Keywords :
X-ray photoelectron spectra; annealing; atomic force microscopy; elemental semiconductors; field effect transistors; fullerene devices; graphene; hole mobility; nanofabrication; reduction (chemical); AFM; C; Raman spectroscopy; X-ray photoelectron spectroscopy; atomic force microscopy; carrier mobility; chemically reduction process; effective hole mobility; electrical characterizations; graphene FETs; graphene transistors; networked graphene devices; printable graphene-based nanoelectronics; thermal annealing; ultralarge-scale single-layer graphene sheets; Annealing; Atomic force microscopy; Chemical processes; Chemical technology; Chemical vapor deposition; FETs; Fabrication; Organic chemicals; Raman scattering; Spectroscopy; FET; graphene oxide (GO); single-layer graphene (SLG);
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2010.2047263
