Experimental Demonstration of Pattern Influence on DRAM SEU and SEFI Radiation Sensitivities

Author

Bougerol, A. ; Miller, F. ; Guibbaud, N. ; Leveugle, R. ; Carriere, T. ; Buard, N.

Author_Institution

EADS France, Eur. Aeronaut. Defense & Space Co., Suresnes, France

Volume

58

Issue

3

fYear

2011

fDate

6/1/2011 12:00:00 AM

Firstpage

1032

Lastpage

1039

Abstract

Thanks to laser and accelerator tests, we investigated the influence of test patterns regarding both SEU and SEFI radiation sensitivities for several DRAM technology nodes, from 210 to 90 nm. Regarding SEUs, we demonstrated that preponderant physical mechanisms vary with technology nodes, so patterns revealing worst-case SEU sensitivity vary as well. Regarding SEFIs, and in particular SEFLUs (Single Event Fuse-Latch Upsets), we shown that the pattern choice has also an influence on their detection rate during accelerator tests due to masking effects. Consequently, non-repetitive patterns, like “Random”, appear the most appropriate to evaluate cutting-edge DRAMs as all Cell-Upset modes are uniformly spread, and all addressing errors are detected.

Keywords

DRAM chips; radiation hardening (electronics); DRAM SEFI radiation sensitivity; DRAM SEU radiation sensitivity; SEFLU; accelerator test; dynamic random-access memory; laser test; pattern influence; preponderant physical mechanism; single event fuse-latch upset; single-event functional interrupt; single-event upset; size 210 nm to 90 nm; Charge transfer; Lasers; Life estimation; Measurement by laser beam; Protons; Random access memory; Sensitivity; Bleeddown; SEFLU; dynamic random-access memory (DRAM); heavy ion; laser; pattern; proton; single-event functional interrupts (SEFI); single-event upset (SEU);

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2011.2107528

Filename

5722061