Title :
Alpha-Particle and Focused-Ion-Beam-Induced Single-Event Transient Measurements in a Bulk 65-nm CMOS Technology
Author :
Gadlage, Matthew J. ; Ahlbin, Jonathan R. ; Bhuva, Bharat L. ; Hooten, Nicholas C. ; Dodds, Nathaniel A. ; Reed, Robert A. ; Massengill, Lloyd W. ; Schrimpf, Ronald D. ; Vizkelethy, Gyorgy
Author_Institution :
NAVSEA Crane, Crane, IN, USA
fDate :
6/1/2011 12:00:00 AM
Abstract :
Pulse widths of single-event transients produced by alpha particles in a 65-nm bulk CMOS technology are reported. The experimental setup and calibration of the alpha particle experiment is described in detail. A focused-ion beam is also utilized to explore how pulse broadening in the test circuit impacts the alpha particle SET measurements. The results of this work show that alpha particles are able to induce transient signals with a width of about 25 ps in this technology.
Keywords :
CMOS integrated circuits; alpha-particle effects; focused ion beam technology; integrated circuit testing; CMOS technology; alpha particle SET measurement; focused-ion-beam-induced single-event transient; induce transient signal; pulse width; size 65 nm; time 25 ps; Alpha particles; Atmospheric measurements; CMOS integrated circuits; Inverters; Particle measurements; Pulse measurements; Transient analysis; Alpha particles; heavy ions; single-event transients; soft error;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2011.2112378
