Alpha-Particle and Focused-Ion-Beam-Induced Single-Event Transient Measurements in a Bulk 65-nm CMOS Technology

Author

Gadlage, Matthew J. ; Ahlbin, Jonathan R. ; Bhuva, Bharat L. ; Hooten, Nicholas C. ; Dodds, Nathaniel A. ; Reed, Robert A. ; Massengill, Lloyd W. ; Schrimpf, Ronald D. ; Vizkelethy, Gyorgy

Author_Institution

NAVSEA Crane, Crane, IN, USA

Volume

58

Issue

3

fYear

2011

fDate

6/1/2011 12:00:00 AM

Firstpage

1093

Lastpage

1097

Abstract

Pulse widths of single-event transients produced by alpha particles in a 65-nm bulk CMOS technology are reported. The experimental setup and calibration of the alpha particle experiment is described in detail. A focused-ion beam is also utilized to explore how pulse broadening in the test circuit impacts the alpha particle SET measurements. The results of this work show that alpha particles are able to induce transient signals with a width of about 25 ps in this technology.

Keywords

CMOS integrated circuits; alpha-particle effects; focused ion beam technology; integrated circuit testing; CMOS technology; alpha particle SET measurement; focused-ion-beam-induced single-event transient; induce transient signal; pulse width; size 65 nm; time 25 ps; Alpha particles; Atmospheric measurements; CMOS integrated circuits; Inverters; Particle measurements; Pulse measurements; Transient analysis; Alpha particles; heavy ions; single-event transients; soft error;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2011.2112378

Filename

5722063