Title :
A high-power and high-efficiency monolithic power amplifier at 28 GHz for LMDS applications
Author :
Siddiqui, Mansoor K. ; Sharma, Arvind K. ; Callejo, Leonardo G. ; Lai, Richard
Author_Institution :
Div. of Electron. Technol., TRW Space & Electron. Group, Redondo Beach, CA, USA
fDate :
12/1/1998 12:00:00 AM
Abstract :
A high-power and high-efficiency monolithic power amplifier operating from 27.5 to 29.5 GHz is presented for local multipoint distribution service. Using 0.15-μm InGaAs/AlGaAs/GaAs pseudomorphic high electron-mobility transistor devices, the two-stage power amplifier on 4-mil GaAs substrate demonstrated greater than 16-dB small-signal gain, 32-dBm (1.6 W) power with 35% power-added efficiency. The amplifier attained peak output power of 33.9 dBm (2.4 W) and peak power-added efficiency of 37%. At the peak power level, the amplifier exhibited power densities in excess of 640 mW/mm, which is the highest output power density attained by Ka-band monolithic power amplifiers. At lower drain voltage, the amplifier attained 43% power-added efficiency with 30-dBm output power
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; gallium arsenide; indium compounds; integrated circuit design; 0.15 micron; 1.6 to 2.4 W; 27.5 to 29.5 GHz; 35 to 43 percent; 4 mil; InGaAs-AlGaAs-GaAs; LMDS applications; high-efficiency monolithic power amplifier; local multipoint distribution service; output power density; peak output power; peak power-added efficiency; power-added efficiency; pseudomorphic high electron-mobility transistor devices; small-signal gain; two-stage power amplifier; Assembly; Distributed amplifiers; Fabrication; Gallium arsenide; High power amplifiers; MMICs; Microwave integrated circuits; Power amplifiers; Power generation; Transmitters;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
