Title :
Analytical model for electrical and thermal transients of self-heating semiconductor devices
Author :
Zhu, Yu. ; Twynam, John K. ; Yagura, Motoji ; Hasegawa, Masatomo ; Hasegawa, Takao ; Eguchi, Yoshihito ; Yamada, Atsushi ; Suematsu, Eiji ; Sakuno, Keiichi ; Sato, Hiroya ; Hashizume, Nobuo
Author_Institution :
Central Res. Labs., Sharp Corp., Nara, Japan
fDate :
12/1/1998 12:00:00 AM
Abstract :
Transients of self-heating semiconductor devices are theoretically investigated based on a feedback circuit model, which is composed of three sub-circuits describing the isothermal electrical characteristics, thermal impedance, and temperature dependence of the electrical characteristics of the devices, respectively. Analytical expressions of the frequency and transient responses have been derived for both the electrical and thermal characteristics of self-heating devices, yielding accurate methods to extract the thermal time constant in both the time and frequency domains. The model is verified by the transient electrical-response measurement of a GaInP/GaAs heterojunction bipolar transistor
Keywords :
feedback; frequency response; frequency-domain analysis; heterojunction bipolar transistors; microwave bipolar transistors; semiconductor device models; time-domain analysis; transient analysis; GaInP-GaAs; electrical transients; feedback circuit model; frequency domain; frequency responses; heterojunction bipolar transistor; isothermal electrical characteristics; self-heating semiconductor devices; thermal impedance; thermal time constant; thermal transients; time domain; transient responses; Analytical models; Electric variables; Feedback circuits; Frequency domain analysis; Gain measurement; Impedance; Isothermal processes; Semiconductor devices; Temperature dependence; Transient analysis;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
