DocumentCode :
1462900
Title :
Sub-Volt Silicon-Organic Electro-optic Modulator With 500 MHz Bandwidth
Author :
Ding, Ran ; Baehr-Jones, Tom ; Kim, Woo-Joong ; Spott, Alexander ; Fournier, Maryse ; Fedeli, Jean-Marc ; Huang, Su ; Luo, Jingdong ; Jen, Alex K.-Y. ; Dalton, Larry ; Hochberg, Michael
Author_Institution :
Dept. of Electr. Eng., Univ. of Washington, Seattle, WA, USA
Volume :
29
Issue :
8
fYear :
2011
fDate :
4/15/2011 12:00:00 AM
Firstpage :
1112
Lastpage :
1117
Abstract :
Lowering the operating voltage of electro-optic modulators is desirable for a variety of applications, most notably in analog photonics and digital data communication. In particular for digital systems such as CPUs, it is desirable to develop modulators that are both temperature-insensitive and compatible with typically sub-2 V CMOS electronics; however, drive voltages in silicon-based Mach-Zehnder interferometers (MZIs) currently exceed 1.8 V. Here, we show an MZI modulator based on an electro-optic polymer-clad silicon slot waveguide, with a halfwave voltage of only 0.69 V (corresponding to a 0.62 V(·)cm modulation figure of merit), and a bandwidth of 500 MHz. We also show that there are paths to significantly improve both the bandwidth and drive voltage.
Keywords :
Mach-Zehnder interferometers; claddings; electro-optical modulation; elemental semiconductors; optical waveguides; polymers; silicon; Mach-Zehnder interferometers; Si; bandwidth 500 MHz; electro-optic polymer-clad silicon slot waveguide; silicon organic electro-optic modulator; voltage 0.69 V; Bandwidth; Electrooptical waveguides; Modulation; Optical losses; Polymers; Silicon; Electro-optic modulation; integrated optics; optical polymers; silicon-on-insulator technology;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/JLT.2011.2122244
Filename :
5722965
Link To Document :
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