Title :
80-GHz distributed amplifiers with transferred-substrate heterojunction bipolar transistors
Author :
Agarwal, Bipul ; Lee, Q. ; Mensa, Dino ; Pullela, Raja ; Guthrie, James ; Rodwell, Mark J.W.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
12/1/1998 12:00:00 AM
Abstract :
We report distributed amplifiers with 80 GHz bandwidth and 6.7 dB mid-band gain. These amplifiers were fabricated in the transferred-substrate heterojunction bipolar transistor integrated circuit technology. Transferred-substrate HBT´s have very high fmax (>400 GHz) and have yielded distributed amplifiers with record gain-bandwidth product
Keywords :
bipolar MIMIC; distributed amplifiers; heterojunction bipolar transistors; integrated circuit design; integrated circuit technology; millimetre wave amplifiers; travelling wave amplifiers; wideband amplifiers; 400 GHz; 6.7 dB; 80 GHz; EHF; MIMIC; MM-wave IC fabrication; distributed amplifiers; gain-bandwidth product; heterojunction bipolar transistors; integrated circuit technology; transferred-substrate HBT IC technology; Bandwidth; Broadband amplifiers; Distributed amplifiers; Epitaxial layers; Frequency; HEMTs; Heterojunction bipolar transistors; Impedance; Molecular beam epitaxial growth; Transmission lines;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
