DocumentCode
1463111
Title
Fully Atomistic Simulations of Phonon-Limited Mobility of Electrons and Holes in 
-,  with 〈001〉, 〈110〉, and 〈111〉 orientations are calculated in a fully atomistic framework for diameters up to 10 nm. Electron-phonon scattering rates are computed with an <i>sp</i><sup>3</sup><i>d</i><sup>5</sup><i>s*</i> tight-binding model for electrons and a valence-force field model for phonons. The Boltzmann equation is then solved exactly for the low-field mobility. Compared to bulk Si, the electron mobilities are strongly reduced, but the hole mobilities can be enhanced in 〈111〉 and 〈110〉 NWs with diameters around 3.5 nm. The mobility, however, rapidly decreases with carrier concentration >; 10<sup>19</sup> cm<sup>-3</sup>.</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Boltzmann equation; electron mobility; electron-phonon interactions; elemental semiconductors; hole mobility; nanowires; silicon; tight-binding calculations; Boltzmann equation; Si; carrier concentration; electron phonon-limited mobility; electron-phonon scattering rates; fully atomistic simulations; hole phonon-limited mobility; low-field mobility; silicon nanowires; tight-binding model; valence-force field model; Effective mass; Electron mobility; Logic gates; Phonons; Scattering; Silicon; Electron–phonon scattering; mobility; nanowire (NW); simulation; tight binding (TB); valence-force field;</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>fLanguage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>English</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Journal_Title</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Electron Devices, IEEE Transactions on</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Publisher</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>ieee</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>ISSN</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>0018-9383</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Type</span></div><div class='col-12 col-md-9 leftDirection leftAlign'><h2 class='mb-0 fw-semibold'>jour</h2></div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>DOI</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>10.1109/TED.2012.2187788</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Filename</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>6164254</div></div>
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