Low-cost GaAs pHEMT MMIC´s for millimeter-wave sensor applications

Author

Siweris, Heinz J. ; Werthof, Andreas ; Tischer, Harald ; Schaper, Ulrich ; Schäfer, A. ; Verweyen, L. ; Grave, T. ; Böck, G. ; Schlechtweg, M. ; Kellner, W.

Author_Institution

Corp. Technol., Siemens AG, Munich, Germany

Volume

46

Issue

12

fYear

1998

fDate

12/1/1998 12:00:00 AM

Firstpage

2560

Lastpage

2567

Abstract

A set of coplanar monolithic microwave integrated circuits for millimeter-wave sensor applications is described. It consists of a highly integrated transceiver chip, a voltage controlled oscillator, a harmonic mixer, and a general-purpose medium-power amplifier. The circuits operate in the 76-77 GHz frequency range and have been fabricated by a production oriented GaAs pHEMT technology. The transceiver chip combines a transmitter with 9-dBm output power and a receiver with an overall conversion gain of 1 dB. The voltage-controlled oscillator is tunable over a 0.8 GHz bandwidth. It includes a buffer amplifier and generates an output power of 10 dBm. The harmonic mixer achieves 18 dB conversion loss when mixing with the fifth harmonic of the LO signal. The two-stage MPA delivers 13 dBm of output power along with a gain of 7.5 dB. The chip set is suited for the cost effective realization of automotive radar systems as well as various sensors for industrial applications

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC mixers; MMIC oscillators; MMIC power amplifiers; field effect MIMIC; field effect MMIC; gallium arsenide; millimetre wave detectors; millimetre wave mixers; millimetre wave oscillators; millimetre wave power amplifiers; road vehicle radar; transceivers; voltage-controlled oscillators; 0.8 GHz; 1 dB; 18 dB; 7.5 dB; 76 to 77 GHz; EHF; GaAs; GaAs pHEMT MMIC technology; automotive radar systems; buffer amplifier; chip set; coplanar MMICs; harmonic mixer; highly integrated transceiver chip; industrial applications; low-cost GaAs pHEMT MMICs; medium-power amplifier; millimeter-wave sensor applications; monolithic microwave integrated circuits; receiver; transmitter; tunable VCO; two-stage amplifier; voltage controlled oscillator; Gain; Gallium arsenide; Millimeter wave integrated circuits; Millimeter wave radar; Millimeter wave technology; PHEMTs; Power amplifiers; Power generation; Transceivers; Voltage-controlled oscillators;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.739248

Filename

739248