Avalanche carrier multiplication in junction transistors and its implications in circuit design

Theories of junction breakdown and transistor action necessary to account for the observed characteristics of avalanche carrier multiplication are surveyed. The implications of these characteristics in circuit design are discussed and certain special techniques for avoidance of anomalous operation in conventional circuits are described. Avalanche multiplication may be used to obtain useful device characteristics and circuits for exploitation of these are surveyed. Methods of measurement of avalanche characteristics are outlined.