Demonstration of a 0.48 THz Amplifier Module Using InP HEMT Transistors

Author

Deal, W.R. ; Mei, X.B. ; Radisic, V. ; Leong, K. ; Sarkozy, S. ; Gorospe, B. ; Lee, J. ; Liu, P.H. ; Yoshida, W. ; Zhou, J. ; Lange, M. ; Uyeda, J. ; Lai, R.

Author_Institution

Northrop Grumman Corp., Redondo Beach, CA, USA

Volume

20

Issue

5

fYear

2010

fDate

5/1/2010 12:00:00 AM

Firstpage

289

Lastpage

291

Abstract

In this letter, we present an amplifier module operating at a frequency of 0.48 THz. This represents almost a 50% increase in solid-state amplifier operating frequency compared to prior state of the art, and is the highest reported amplifier to date. The amplifier demonstrates a peak gain of 11.7 dB measured in a waveguide split-block housing. Sub 50-nm InP HEMT transistors with an estimated f _MAX > 1 THz are used to achieve this level of performance. The five stage amplifier is realized in coplanar waveguide, and uses monolithically integrated dipole probes to couple the chip from the WR 2.2 waveguide.

Keywords

III-V semiconductors; coplanar waveguides; high electron mobility transistors; indium compounds; low noise amplifiers; millimetre wave amplifiers; terahertz wave devices; InP; InP HEMT transistor; amplifier module; coplanar waveguide; frequency 0.48 THz; gain 11.7 dB; low noise amplifier; monolithically integrated dipole probes; size 50 nm; solid-state amplifier; waveguide split-block housing; Coplanar waveguide; HEMT; MM-wave; MMIC; low noise amplifier; sub-millimeter wave;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2010.2045597

Filename

5443585