Title :
A Tri-Modal 20-Gbps/Link Differential/DDR3/GDDR5 Memory Interface
Author :
Kaviani, Kambiz ; Wu, Ting ; Wei, Jason ; Amirkhany, Amir ; Shen, Jie ; Chin, T.J. ; Thakkar, Chintan ; Beyene, Wendemagegnehu T. ; Chan, Norman ; Chen, Catherine ; Chuang, Bing Ren ; Dressler, Deborah ; Gadde, Vijay P. ; Hekmat, Mohammad ; Ho, Eugene ; H
Author_Institution :
Rambus Inc., Sunnyvale, CA, USA
fDate :
4/1/2012 12:00:00 AM
Abstract :
This paper describes a tri-modal asymmetric bidirectional differential memory interface that supports data rates of up to 20 Gbps over 3" FR4 PCB channels while achieving power efficiency of 6.1 mW/Gbps at full speed. The interface also accommodates single-ended standard DDR3 and GDDR5 signaling at 1.6-Gbps and 6.4-Gbps operations, respectively, without package change. The compact, low-power and high-speed tri-modal interface is enabled by substantial reuse of the circuit elements among various signaling modes, particularly in the wide-band clock generation and distribution system and the multi-modal driver output stage, as well as the use of fast equalization for post-cursor intersymbol interference (ISI) mitigation. In the high-speed differential mode, the system utilizes a 1-tap transmit equalizer during a WRITE operation to the memory. In contrast, during a memory READ operation, it employs a linear equalizer (LEQ) with 3 dB of peaking as well as a calibrated high-speed 1-tap predictive decision feedback equalizer (prDFE), while no transmitter equalization is assumed for the memory. The prototype tri-modal interface implemented in a 40-nm CMOS process, consists of 16 data links and achieves more than 2.5 × energy-efficient memory transactions at 16 Gbps compared to a previous single-mode generation.
Keywords :
CMOS memory circuits; DRAM chips; calibration; clock distribution networks; computer interfaces; data communication; decision feedback equalisers; energy conservation; interference suppression; intersymbol interference; low-power electronics; printed circuits; 1-tap transmit equalizer; CMOS process; FR4 PCB channels; ISI mitigation; WRITE operation; bit rate 20 Gbit/s; calibrated high-speed 1-tap predictive decision feedback equalizer; circuit elements; data links; energy-efficient memory transactions; high-speed differential mode; linear equalizer; low-power high-speed trimodal interface; memory READ operation; multimodal driver output stage; post-cursor intersymbol interference mitigation; power efficiency; single-ended standard DDR3 signaling; single-ended standard GDDR5 signaling; size 40 nm; trimodal asymmetric bidirectional differential memory interface; trimodal differential-DDR3-GDDR5 memory interface; wideband clock distribution system; wideband clock generation system; Clocks; Delay; Generators; Multiplexing; Phase locked loops; Random access memory; Receivers; Calibration; DDR; GDDR; clocking; decision feedback equalization; high-voltage protection; multi-VCO PLL; multi-standard memory interface; offset cancellation; predictive DFE; quadrature generator;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2012.2185370