Title :
A broad-band balanced HEMT frequency doubler in uniplanar technology
Author :
Yanev, Andrey S. ; Todorov, Bogdan N. ; Ranev, Vancety Z.
Author_Institution :
Inst. of Electron., Bulgarian Acad. of Sci., Sofia, Bulgaria
fDate :
12/1/1998 12:00:00 AM
Abstract :
Design and performance of a simple balanced high electron-mobility transistor doubler in uniplanar technology are described. The uniplanar in-phase and out-of-phase T-junctions with 2-octave bandwidth and a hybrid ring coupler with more than octave bandwidth have also been developed and investigated as a part of the doubler circuits. Measurements show more than 3-dB conversion gain, effective fundamental- and odd-harmonics suppression (>25 dB) in octave bandwidth (output frequency from 6 to 12 GHz), and maximum conversion gain of 8.8 dB at 3-dBm-input power level. The uniplanar design and simplicity of the circuit itself make the proposed frequency doubler suitable for monolithic-microwave integrated-circuit fabrication in millimeter-wave range
Keywords :
HEMT integrated circuits; MMIC frequency convertors; field effect MIMIC; frequency multipliers; harmonics suppression; 3 to 8.8 dB; broad-band balanced HEMT frequency doubler; conversion gain; fundamental-harmonics suppression; hybrid ring coupler; in-phase T-junctions; millimeter-wave range; monolithic-microwave integrated-circuit; octave bandwidth; odd-harmonics suppression; out-of-phase T-junctions; uniplanar technology; Bandwidth; Coupling circuits; Fabrication; Frequency conversion; Frequency measurement; Gain measurement; HEMTs; MODFETs; Millimeter wave circuits; Power measurement;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
