Modeling the Non-Uniform Distribution of Radiation-Induced Interface Traps

The incorporation of total ionizing dose (TID) effects into surface-potential-based compact models requires calculating the dependence of surface potential $({\psi}_{s})$ on radiation-induced defect densities. This dependence is obtained through the introduction of the oxide trapped charge $(N_{ot})$ and the interface trap $(N_{\it})$ areal densities into the surface potential equation (SPE). In this work we present an approach for introducing a non-uniform energy distribution of interface traps into calculations of ${\psi}_{s}$ . The approach is verified experimentally through comparisons with capacitance vs. voltage ( $C$ - $V$ ) characteristics of metal-oxide-semiconductor (MOS) capacitors exposed to ionizing radiation.