Title :
Automated characterization of HF power transistors by source-pull and multiharmonic load-pull measurements based on six-port techniques
Author :
Berghoff, Gerald ; Bergeault, Eric ; Huyart, Bernard ; Jallet, Louis
Author_Institution :
Dept. COM, ENST, Paris, France
Abstract :
An original measurement system for nonlinear microwave power-transistor characterization using six-port reflectometers is presented. It allows independent active tuning of the output impedances at f 0 and 2f 0 (multiharmonic load-pull) and variation of the source impedance at the input port at f 0 (source-pull). An appropriate search algorithm enables automatic optimization of the output impedances and leads to fast user-friendly operation of the system. Experimental results are shown for a commercial GaAs MESFET power transistor at f 0=2 GHz.
Keywords :
Schottky gate field effect transistors; microwave measurement; microwave power transistors; multiport networks; semiconductor device measurement; 2 GHz; HF power transistors; MESFET; independent active tuning; multiharmonic load-pull measurements; nonlinear microwave power-transistor; output impedances; power-transistor characterization; six-port techniques; source impedance; source-pull measurements; user-friendly operation; Frequency measurement; Hafnium; Impedance; Length measurement; Load management; Microwave measurements; Power measurement; Power transistors; Reflection; Tuners;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
