DocumentCode :
1463466
Title :
Silicon surface alloy transistors for high-frequency switching and chopper-amplifier applications
Author :
Charman, P.A.
Volume :
21
Issue :
2
fYear :
1961
fDate :
2/1/1961 12:00:00 AM
Firstpage :
201
Lastpage :
204
Abstract :
These pnp silicon transistors are made by an electrochemical process involving optical monitoring of base width and evaporation of aluminium on to controlled areas through a stainless steel mask. Subsequent alloying produces an extremely thin base region which allows the transistor to retain its high-frequency performance down to extremely low operating levels. The combination of low saturation resistance and high turn-on voltage can be used to produce very simple high-speed switching circuits operating over a wide temperature range, and the same characteristics contribute to low drift rates in chopper-amplifier circuits.
Keywords :
convertors; semiconductor switches; transistor applications; transistors;
fLanguage :
English
Journal_Title :
Radio Engineers, Journal of the British Institution of
Publisher :
iet
Type :
jour
DOI :
10.1049/jbire.1961.0025
Filename :
5259813
Link To Document :
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