DocumentCode
1463471
Title
Gain-enhanced 132-160 GHz low-noise amplifier using 0.13 μm SiGe BiCMOS
Author
Bo Zhang ; Yong-Zhong Xiong ; Lei Wang ; Sangming Hu ; Le-Wei Li
Author_Institution
Xi´an Univ. of Posts & Telecommun., Xi´an, China
Volume
48
Issue
5
fYear
2012
Firstpage
257
Lastpage
259
Abstract
A 132-160 GHz low-noise amplifier (LNA) in 0.13 μm SiGe BiCMOS technology is presented. The gain-boosting technique and 3D grounded-shielding structures have been employed to achieve higher gain with lower power consumption and silicon occupation. The experimental results show that the LNA with a chip area of 400 × 900 μm achieves gain of 21 dB with a 3 dB bandwidth of 28 GHz and noise figure of 8.5 dB at 145 GHz, with total DC power consumption of 14.5 mW.
Keywords
BiCMOS analogue integrated circuits; Ge-Si alloys; field effect MIMIC; low noise amplifiers; semiconductor materials; 3D grounded-shielding structures; DC power consumption; LNA; SiGe; bandwidth 28 GHz; frequency 132 GHz to 160 GHz; gain 21 dB; gain-boosting technique; gain-enhanced low-noise amplifier; noise figure 8.5 dB; power 14.5 mW; silicon occupation; silicon-germanium BiCMOS; size 0.13 mum;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2011.3882
Filename
6164312
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