DocumentCode :
1463544
Title :
Investigation of relationship between 2DEG density and reverse leakage current in AlGaN/GaN schottky barrier diodes
Author :
Terano, Akihisa ; Tsuchiya, Takao ; Mochizuki, K.
Author_Institution :
Central Res. Lab., Hitachi, Ltd., Tokyo, Japan
Volume :
48
Issue :
5
fYear :
2012
Firstpage :
274
Lastpage :
275
Abstract :
The influence of the density of two-dimensional electron gas (ns) formed in AlGaN/GaN-based planar Schottky barrier diodes (SBDs) on the reverse leakage current (IR) was investigated by fabricating SBDs with three different AlN mole fractions in the AlGaN layers. It was found that IR decreased exponentially with the reduction of ns; e.g. IR decreased by seven orders of magnitude simply by reducing ns from 1.0×1013 to 3.6×1012 cm-2.
Keywords :
III-V semiconductors; Schottky diodes; aluminium compounds; electron gas; gallium compounds; leakage currents; wide band gap semiconductors; 2DEG density; AlGaN-GaN; SBD fabrication; Schottky barrier diodes; reverse leakage current; two-dimensional electron gas density;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2011.3919
Filename :
6164323
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1463544
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