• DocumentCode
    1463544
  • Title

    Investigation of relationship between 2DEG density and reverse leakage current in AlGaN/GaN schottky barrier diodes

  • Author

    Terano, Akihisa ; Tsuchiya, Takao ; Mochizuki, K.

  • Author_Institution
    Central Res. Lab., Hitachi, Ltd., Tokyo, Japan
  • Volume
    48
  • Issue
    5
  • fYear
    2012
  • Firstpage
    274
  • Lastpage
    275
  • Abstract
    The influence of the density of two-dimensional electron gas (ns) formed in AlGaN/GaN-based planar Schottky barrier diodes (SBDs) on the reverse leakage current (IR) was investigated by fabricating SBDs with three different AlN mole fractions in the AlGaN layers. It was found that IR decreased exponentially with the reduction of ns; e.g. IR decreased by seven orders of magnitude simply by reducing ns from 1.0×1013 to 3.6×1012 cm-2.
  • Keywords
    III-V semiconductors; Schottky diodes; aluminium compounds; electron gas; gallium compounds; leakage currents; wide band gap semiconductors; 2DEG density; AlGaN-GaN; SBD fabrication; Schottky barrier diodes; reverse leakage current; two-dimensional electron gas density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2011.3919
  • Filename
    6164323
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1463544