Title :
Antimonide-based 2.3 μm photonic crystal coupled-cavity lasers for CH4
Author :
Jahjah, M. ; Moumdji, S. ; Gauthier-Lafaye, Olivier ; Bonnefont, S. ; Rouillard, Y. ; Vicet, A.
Author_Institution :
IES, Univ. Montpellier 2, Montpellier, France
Abstract :
GaInAsSb/AlGaAsSb quantum wells lasers have been grown by molecular beam epitaxy and processed into ridge cavities coupled by an intracavity photonic crystal mirror. The lasers operate at room temperature in the continuous wave regime at 2.35 m. One of these devices was used as an excitation source on a methane sensor based on quartz-enhanced photoacoustic spectroscopy. A spectrophone, consisting of a quartz tuning fork and two steel microresonators, was used. A detection limit of 400 ppbv was achieved using second derivative wavelength modulation detection.
Keywords :
III-V semiconductors; arsenic compounds; chemical sensors; gallium arsenide; indium compounds; laser cavity resonators; microcavities; molecular beam epitaxial growth; optical modulation; optical sensors; organic compounds; photoacoustic spectra; photonic crystals; quantum well lasers; remote sensing by laser beam; semiconductor growth; GaInAsSb-AlGaAsSb; QEPAS; coupled cavity lasers; intracavity photonic crystal mirror; methane sensor; microresonators; molecular beam epitaxy; photonic crystal; quantum wells lasers; quartz tuning fork; quartz-enhanced photoacoustic spectroscopy; ridge cavities; room temperature; second derivative wavelength modulation detection; spectrophone; temperature 293 K to 298 K; wavelength 2.3 m; wavelength 2.35 m;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2011.3614