• DocumentCode
    1463576
  • Title

    Fabrication of In0.53Ga0.47AsN0.01/AlAs0.56Sb0.44 resonant tunnelling diodes grown on inp by molecular beam epitaxy

  • Author

    Kawamura, Yuriko ; Mitsuyoshi, K.

  • Author_Institution
    Grad. Sch. of Eng., Osaka Prefecture Univ., Sakai, Japan
  • Volume
    48
  • Issue
    5
  • fYear
    2012
  • Firstpage
    280
  • Lastpage
    281
  • Abstract
    An In0.53Ga0.47AsN0.01/AlAs0.56Sb0.44 resonant tunnelling diode (RTD) has been fabricated by molecular beam epitaxy on InP substrates for the first time. A clear negative differential resistance (NDR) characteristic was observed at room temperature, where the peak/valley (P/V) ratio is as high as 19.6. This result indicates that the use of an InGaAsN layer in the RTD structure is very effective on obtaining an NDR characteristic with high P/V ratio.
  • Keywords
    aluminium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; resonant tunnelling diodes; wide band gap semiconductors; In0.53Ga0.47AsN0.01-AlAs0.56Sb0.44; InP; NDR characteristic; RTD; molecular beam epitaxy; negative differential resistance characteristic; resonant tunnelling diodes; temperature 293 K to 298 K;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2012.0186
  • Filename
    6164327
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1463576