Epitaxial silicon carbide for X-ray detection

Author

Bertuccio, G. ; Casiraghi, R. ; Nava, F.

Author_Institution

Dipt. di Elettronica e Inf., Politecnico di Milano, Italy

Volume

48

Issue

2

fYear

2001

fDate

4/1/2001 12:00:00 AM

Firstpage

232

Lastpage

233

Abstract

We present the first experimental results of X-ray detection and spectroscopy by means of Schottky junctions on epitaxial silicon carbide (SiC). The devices have a junction area of 3 mm² on an n-type 4H-SiC layer 30 μm thick with a dopant concentration of 1.8×10 cm at 300 K, the reverse current density of the best device varies between 2 pA/cm² and 18 pA/cm² as the mean electric field is increased from 40 kV/cm up to 170 kV/cm. The devices have been tested with X and γ rays from ²⁴¹Am; the best measured energy resolution is 2.7 keV FWHM at room temperature

Keywords

Schottky barriers; X-ray detection; X-ray spectroscopy; gamma-ray detection; semiconductor counters; semiconductor epitaxial layers; silicon compounds; γ ray detection; 300 K; ²⁴¹Am; Am; Schottky junctions; SiC; X-ray detection; X-ray spectroscopy; energy resolution; epitaxial layer; mean electric field; reverse current density; room temperature; Current density; Energy measurement; Schottky diodes; Semiconductor diodes; Silicon carbide; Spectroscopy; Temperature; Testing; X-ray detection; X-ray detectors;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.915369

Filename

915369