Low-temperature polycrystalline silicon thin-film transistors for displays

Author

Hseih, Biay-cheng ; Hatalis, Miltiadis K. ; Greve, David W.

Author_Institution

Dept. of Electr. & Comput. Eng., Carnegie-Mellon Univ., Pittsburgh, PA, USA

Volume

35

Issue

11

fYear

1988

fDate

11/1/1988 12:00:00 AM

Firstpage

1842

Lastpage

1845

Abstract

Polycrystalline silicon thin-film transistors (TFTs) have been fabricated with low-temperature (600°C) oxidized semi-insulating polysilicon (SIPOS) as the gate insulator. Even though no process temperature exceeds 600°C, no threshold drift has been observed. In addition, low threshold voltages and effective mobilities as high as 44 cm²/V·s were measured, and an ON/OFF current ratio >5×10⁵ has been achieved after hydrogen passivation. As a result, these devices are highly suitable for application to flat-panel displays on low-melting-point glass

Keywords

carrier mobility; elemental semiconductors; flat panel displays; silicon; thin film transistors; 600 degC; SIPOS; Si-SiO₂; effective mobilities; flat-panel displays; gate insulator; low threshold voltages; low-melting-point glass; on/off current ratio; passivation; polysilicon TFTs; process temperature; Current measurement; Displays; Glass; Hydrogen; Insulation; Passivation; Silicon; Temperature; Thin film transistors; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.7395

Filename

7395