Title :
Low-temperature polycrystalline silicon thin-film transistors for displays
Author :
Hseih, Biay-cheng ; Hatalis, Miltiadis K. ; Greve, David W.
Author_Institution :
Dept. of Electr. & Comput. Eng., Carnegie-Mellon Univ., Pittsburgh, PA, USA
fDate :
11/1/1988 12:00:00 AM
Abstract :
Polycrystalline silicon thin-film transistors (TFTs) have been fabricated with low-temperature (600°C) oxidized semi-insulating polysilicon (SIPOS) as the gate insulator. Even though no process temperature exceeds 600°C, no threshold drift has been observed. In addition, low threshold voltages and effective mobilities as high as 44 cm2/V·s were measured, and an ON/OFF current ratio >5×105 has been achieved after hydrogen passivation. As a result, these devices are highly suitable for application to flat-panel displays on low-melting-point glass
Keywords :
carrier mobility; elemental semiconductors; flat panel displays; silicon; thin film transistors; 600 degC; SIPOS; Si-SiO2; effective mobilities; flat-panel displays; gate insulator; low threshold voltages; low-melting-point glass; on/off current ratio; passivation; polysilicon TFTs; process temperature; Current measurement; Displays; Glass; Hydrogen; Insulation; Passivation; Silicon; Temperature; Thin film transistors; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
