DocumentCode
1463817
Title
Defect formation mechanisms in laser welding techniques for semiconductor laser packaging
Author
Cheng, Wood-Hi ; Wang, Wei-Han ; Chen, Jyh-Cheng
Author_Institution
Inst. of Electro-Opt. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
Volume
19
Issue
4
fYear
1996
fDate
11/1/1996 12:00:00 AM
Firstpage
764
Lastpage
769
Abstract
In this work, the authors experimentally investigate defect formation mechanisms in spot-welding techniques for semiconductor laser packaging. Results obtained from the stainless-to-stainless steel joints indicate that the dimension of hole formation depends on the laser power density, and the hole disappears as the power density is below 3×105 W/cm2. In the stainless-to-KovarTM joints, surface cracks are eliminated by reducing the gold thickness from the KovarTM before welding, while the centerline cracks in the fusion zone are eliminated by the air gap tightness between the KovarTM and stainless steel. The excess laser energy is the possible cause for hole formation. The low solubility of gold in the KovarTM and the large air gap between the joints are the possible causes for surface cracks and enhancing centerline crack propagation, respectively. A technique for reduction of post weld shift (PWS) in semiconductor laser packaging is also presented. Preliminary reliability data demonstrated that these laser packages, which do not have hole and crack defects in the welded joints, are reliable
Keywords
laser beam welding; optical fabrication; semiconductor device packaging; semiconductor lasers; Au; centerline cracks; gold solubility; hole defects; laser welding; post weld shift; semiconductor laser packaging; spot welding; stainless-to-Kovar joint; stainless-to-stainless steel joint; surface cracks; Costs; Fiber lasers; Gold; Laser fusion; Laser stability; Optical materials; Semiconductor device packaging; Semiconductor lasers; Steel; Welding;
fLanguage
English
Journal_Title
Components, Packaging, and Manufacturing Technology, Part B: Advanced Packaging, IEEE Transactions on
Publisher
ieee
ISSN
1070-9894
Type
jour
DOI
10.1109/96.544368
Filename
544368
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