DocumentCode :
1463823
Title :
A 19.4 dBm, Q-Band Class-E Power Amplifier in a 0.12 
SiGe BiCMOS Process
Author :
Kalantari, Nader ; Buckwalter, James F.
Author_Institution :
ECE Dept., Univ. of California at San Diego (UCSD), La Jolla, CA, USA
Volume :
20
Issue :
5
fYear :
2010
fDate :
5/1/2010 12:00:00 AM
Firstpage :
283
Lastpage :
285
Abstract :
A Q-band, Class-E power amplifier has been designed and fabricated in a 0.12 μm SiGe BiCMOS technology. The amplifier was designed for high output power using on-chip power combining networks. It operates respectively from a 1.2 V supply for peak efficiency and a 2.4 V supply for maximum power and occupies an area of 0.801 mm2. A peak PAE of 18% is measured for an output power of 11.3 dBm at 45 GHz and a maximum P sat of 19.4 dBm is measured at 42 GHz with a PAE of 14.4%. The power amplifier operates from 42 to 50 GHz.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; millimetre wave power amplifiers; semiconductor materials; Q-band class-E power amplifier; SiGe; SiGe BiCMOS process; frequency 42 GHz to 50 GHz; heterojunction bipolar transistor; high output power; on-chip power; peak efficiency; size 0.12 μm; voltage 1.2 V; voltage 2.4 V; Class-E; hetrojunction bipolar transistor (HBT); power amplifier (PA); silicon germanium (SiGe);
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2010.2045594
Filename :
5443680
Link To Document :
