Title :
40 Gbit/s GaAs P-HEMT driver module for optical communications
Author :
Thiam, A. ; Legros, E. ; Vuye, S. ; Andri, P. ; Wawrzynkowski, E. ; Joly, C.
Author_Institution :
France Telecom/CNET, OPTO+, Marcoussis, France
fDate :
11/12/1998 12:00:00 AM
Abstract :
A 40 Gbit/s driver module incorporating a set of two original double-distributed amplifiers, based on 0.15 μm GaAs P-HEMT (high electron mobility transistor) technology, has been designed and realised. This module provides a state-of-the-art output driving voltage of near 3 Vpp, into a 50 Ω load, and an 18 dB gain over a DC to 41.5 GHz bandwidth: it is able to drive a high speed electroabsorption modulator
Keywords :
HEMT integrated circuits; III-V semiconductors; distributed amplifiers; driver circuits; electro-optical modulation; electroabsorption; gallium arsenide; high-speed optical techniques; optical communication equipment; 0.15 micron; 18 dB; 3 V; 40 Gbit/s; 41.5 GHz; GaAs; GaAs P-HEMT driver module; double distributed amplifier; high electron mobility transistor; high speed electroabsorption modulator; optical communication;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981550
