DocumentCode
1463914
Title
SiC devices for advanced power and high-temperature applications
Author
Wondrak, Wolfgang ; Held, Raban ; Niemann, Ekkehard ; Schmid, Ulrich
Author_Institution
Res. & Technol., DaimlerCrystal AG, Frankfurt on Main, Germany
Volume
48
Issue
2
fYear
2001
fDate
4/1/2001 12:00:00 AM
Firstpage
307
Lastpage
308
Abstract
Silicon carbide (SiC) process technology has made rapid progress, resulting in the realization of very promising electronic devices and sensors, enabling advanced solutions in power industry and mobile systems. In particular, for electronics working under harsh environmental conditions, SiC devices reach unprecedented performance. Transfer to production has already started for some applications
Keywords
MIS devices; power semiconductor devices; semiconductor materials; silicon compounds; SiC; SiC power electronic devices; advanced power applications; harsh environmental conditions; high-temperature applications; mobile systems; power industry; sensors; Chemical sensors; Insulated gate bipolar transistors; Intelligent sensors; Power electronics; Schottky diodes; Semiconductor diodes; Silicon carbide; Switching loss; Temperature sensors; Thermal conductivity;
fLanguage
English
Journal_Title
Industrial Electronics, IEEE Transactions on
Publisher
ieee
ISSN
0278-0046
Type
jour
DOI
10.1109/41.915409
Filename
915409
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