Title :
High-responsivity porous-SiC thin-film pn junction photodetector
Author :
Wu, K.H. ; Fang, Y.K. ; Hsieh, W.T. ; Ho, J.-J. ; Lin, W.J. ; Hwang, J.D.
Author_Institution :
Dept. of Electr. Eng., Nan-Tai Inst. of Technol., Tainan, Taiwan
fDate :
11/12/1998 12:00:00 AM
Abstract :
A porous-SiC thin-film photodetector with a pn junction structure has been successfully fabricated on a Si substrate. The developed device exhibits a high responsivity of 0.4 A/W at 25°C for 650 nm irradiation. In particular, the device has a responsivity of 0.35 A/W and a photo/dark current ratio larger than 100 at 200°C, indicating its potential capability for high-temperature operation
Keywords :
dark conductivity; optical films; p-n heterojunctions; photoconducting materials; photodetectors; porous materials; silicon compounds; thin film devices; 100 C; 200 C; 25 C; 650 nm; Si; Si substrate; SiC; high responsivity; high-responsivity porous-SiC thin-film pn junction photodetector; high-temperature operation; photo/dark current ratio; pn junction structure; porous-SiC thin-film photodetector;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981547
