Title :
InP-InGaAs uni-travelling-carrier photodiode for monolithic integration with heterojunction bipolar transistors
Author :
Eriksson, U. ; Yamahata, S. ; Kurishima, Kenji ; Furuta, Takehiro ; Ishibashi, Takayuki
Author_Institution :
NTT Syst. Electron. Lab., Kanagawa
fDate :
11/12/1998 12:00:00 AM
Abstract :
A common epitaxial layer structure is proposed for a uni-travelling-carrier photodiode and a heterojunction bipolar transistor (HBT) for which zinc indiffusion is used on the HBT base-collector junctions to complete the photodiode structure. Fabricated photodiodes show 3 dB bandwidths of between 60 and 80 GHz for output voltages between 1 and 2 V
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; optical receivers; photodiodes; semiconductor epitaxial layers; 1 to 2 V; 3 dB bandwidths; 60 to 80 GHz; III-V semiconductors; InP-InGaAs; base-collector junctions; epitaxial layer structure; heterojunction bipolar transistors; output voltages; uni-travelling-carrier photodiode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981542
