DocumentCode :
1464069
Title :
High-performance InAs quantum well Hall sensors on germanium substrates
Author :
Behet, M. ; De Boeck, J. ; Borghs, G. ; Mijlemans, P.
Author_Institution :
IMEC, Leuven, Belgium
Volume :
34
Issue :
23
fYear :
1998
fDate :
11/12/1998 12:00:00 AM
Firstpage :
2273
Lastpage :
2274
Abstract :
High quality InAs/Al0.2Ga0.8Sb quantum well structures were grown on Germanium substrates by molecular beam epitaxy. The excellent transport properties resulted in sensitivities of 0.85 T -1 (voltage drive) and 370 V/A/T (current drive) for a cross-shaped sensor at room temperature. The results show that the performance of Hall sensors on germanium and on GaAs substrates is comparable in terms of sensitivity and temperature stability
Keywords :
Hall effect transducers; III-V semiconductors; indium compounds; magnetic sensors; molecular beam epitaxial growth; quantum well devices; Ge; InAs quantum well Hall sensor; InAs-Al0.2Ga0.8Sb; germanium substrate; molecular beam epitaxy; sensitivity; temperature stability; transport properties;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19981540
Filename :
739664
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1464069
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