Title :
Low-frequency noise in AlGaN-GaN doped-channel heterostructure field effect transistors grown on insulating SiC substrates
Author :
Kuksenkov, D.V. ; Giudice, G.E. ; Temkin, H. ; Gaska, R. ; Ping, A. ; Adesida, I.
Author_Institution :
Dept. of Electr. Eng., Texas Tech. Univ., Lubbock, TX, USA
fDate :
11/12/1998 12:00:00 AM
Abstract :
The authors report low-frequency noise measurements of doped-channel AlGaN-GaN heterostructure field-effect transistors grown on insulating silicon carbide substrates. In the frequency range 1 Hz-100 kHz the observed noise is of the 1/f type, and the estimated value of the Hooge constant αH is ~10-3
Keywords :
1/f noise; III-V semiconductors; aluminium compounds; gallium compounds; high-temperature electronics; power field effect transistors; semiconductor device noise; silicon compounds; 1 Hz to 100 kHz; 1/f type; AlGaN-GaN; Hooge constant; LF noise measurements; SiC; doped-channel HFET; heterostructure field effect transistors; insulating SiC substrates; low-frequency noise;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981588
