Title :
Maximum operating junction temperature of PT and NPT IGBTs
Author :
Sheng, Kun ; Williams, Barry W. ; Finney, Stephen J.
Author_Institution :
Dept. of Comput. & Electr. Eng., Heriot-Watt Univ., Edinburgh
fDate :
11/12/1998 12:00:00 AM
Abstract :
The maximum operating junction temperatures of punch-through (PT) and non-punch-through (NPT) insulated gate bipolar transistors (IGBTs) at high frequency are investigated experimentally. The maximum junction temperature of the PT IGBT varies with circuit conditions and is in the range 115-170°C. The NPT IGBT can typically operate at junction temperatures up to 230°C in various circuits
Keywords :
insulated gate bipolar transistors; power semiconductor switches; power transistors; thermal analysis; 115 to 230 C; high frequency operation; insulated gate bipolar transistors; maximum operating junction temperature; non-punch-through IGBT; punch-through IGBT;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981580
