Title :
Collapsing the CMOS transistor chain to an effective single equivalent transistor
Author :
Chatzigeorgiou, A. ; Nikolaidis, S.
Author_Institution :
Dept. of Comput. Sci., Aristotelian Univ. of Thessaloniki, Greece
fDate :
10/1/1998 12:00:00 AM
Abstract :
A method for collapsing the transistor chain of CMOS gates to a single equivalent transistor is introduced. The width of the equivalent transistor is calculated taking into account the operating conditions of each transistor in the structure, resulting in very good agreement with SPICE simulations. Second-order effects such as carrier velocity saturation in submicron devices, body effect and coupling capacitance are considered and ramp inputs are used. The actual time point when the chain starts conducting which influences significantly the accuracy of the model is also extracted. Finally, an algorithm to collapse every possible input pattern to a single input is introduced
Keywords :
CMOS digital integrated circuits; CMOS logic circuits; VLSI; capacitance; equivalent circuits; integrated circuit modelling; logic gates; CMOS gates; CMOS transistor chain collapsing; body effect; carrier velocity saturation; coupling capacitance; input pattern collapse algorithm; model accuracy; ramp inputs; second-order effects; single equivalent transistor; submicron devices;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
DOI :
10.1049/ip-cds:19982271