Title :
Large-signal characteristics of InP-based heterojunction bipolar transistors and optoelectronic cascode transimpedance amplifiers
Author :
Samelis, Apostolos ; Pavlidis, Dimitris ; Chandrasekhar, S. ; Lunardi, Leda M. ; Rios, Jose
fDate :
12/1/1996 12:00:00 AM
Abstract :
A large-signal model for InP/InGaAs-based single HBTs incorporating soft-breakdown effects to the LIBRA Gummel-Poon (GP) model is developed and its validity is established from DC to microwave frequencies and over a wide range of input excitation levels. The large-signal characteristics of a cascode InP-based transimpedance optoelectronic preamplifier employing such devices are studied. Gain compression for the preamplifier was found to take place at an input power level of -20 dBm. Input power excitation varying from -65 to -5 dBm results in a degradation of the amplifier transimpedance gain of the order of 3 dBn. Experimental and theoretical characteristics are presented for the InP-based HBTs and transimpedance amplifier. Self-biasing effects are suggested as possible origin of the transimpedance variations with input power
Keywords :
III-V semiconductors; electric breakdown; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; preamplifiers; semiconductor device models; III-V semiconductors; InP-InGaAs; LIBRA Gummel-Poon model; amplifier transimpedance gain; gain compression; heterojunction bipolar transistors; input excitation levels; input power excitation; input power level; large-signal characteristics; large-signal model; optoelectronic cascode transimpedance amplifiers; self-biasing effects; soft-breakdown effects; Degradation; Heterojunction bipolar transistors; Heterojunctions; Indium phosphide; Integrated circuit modeling; Laboratories; Microwave frequencies; Optical amplifiers; Optical receivers; Optoelectronic devices; Power amplifiers; Preamplifiers; Solid state circuits;
Journal_Title :
Electron Devices, IEEE Transactions on
