DocumentCode
1464347
Title
Ohmic contacts to semiconducting diamond
Author
Moazed, K.L. ; Nguyen, Richard ; Zeidler, James R.
Author_Institution
North Carolina State Univ., Raleigh, NC, USA
Volume
9
Issue
7
fYear
1988
fDate
7/1/1988 12:00:00 AM
Firstpage
350
Lastpage
351
Abstract
A solid-state reaction process for producing ohmic contacts to polished natural semiconducting diamond surfaces is discussed. The approach attempts to systematically characterize the processes which occur when metallic films of known thickness are deposited on a smooth diamond surface and annealed in the solid state under controlled conditions. Annealed tantalum/gold and titanium/gold deposits on
Keywords
annealing; diamond; elemental semiconductors; gold; ohmic contacts; semiconductor-metal boundaries; tantalum; titanium; Ta-Au-C; Ti-Au-C; annealing; metallic films; metallography; ohmic contacts; scanning electron microscopy; secondary ion mass spectrometry; semiconducting diamond; solid-state reaction process; Annealing; Control systems; Gold; Ohmic contacts; Semiconductivity; Semiconductor films; Solid state circuits; Surface resistance; Thickness control; Titanium;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.740
Filename
740
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