DocumentCode :
1464347
Title :
Ohmic contacts to semiconducting diamond
Author :
Moazed, K.L. ; Nguyen, Richard ; Zeidler, James R.
Author_Institution :
North Carolina State Univ., Raleigh, NC, USA
Volume :
9
Issue :
7
fYear :
1988
fDate :
7/1/1988 12:00:00 AM
Firstpage :
350
Lastpage :
351
Abstract :
A solid-state reaction process for producing ohmic contacts to polished natural semiconducting diamond surfaces is discussed. The approach attempts to systematically characterize the processes which occur when metallic films of known thickness are deposited on a smooth diamond surface and annealed in the solid state under controlled conditions. Annealed tantalum/gold and titanium/gold deposits on
Keywords :
annealing; diamond; elemental semiconductors; gold; ohmic contacts; semiconductor-metal boundaries; tantalum; titanium; Ta-Au-C; Ti-Au-C; annealing; metallic films; metallography; ohmic contacts; scanning electron microscopy; secondary ion mass spectrometry; semiconducting diamond; solid-state reaction process; Annealing; Control systems; Gold; Ohmic contacts; Semiconductivity; Semiconductor films; Solid state circuits; Surface resistance; Thickness control; Titanium;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.740
Filename :
740
Link To Document :
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