$\\hbox {HfO}_{x}/\\hbox {TiO}_{x}/\\hbox {HfO}_{x}/ \\hbox {TiO}_{x}$ Multilayer-Based Forming-Free RRAM Devices With Excellent Uniformity

Author

Fang, Z. ; Yu, H.Y. ; Li, X. ; Singh, N. ; Lo, G.Q. ; Kwong, D.L.

Author_Institution

Inst. of Microelectron., Agency for Sci., Technol. & Res. (A*STAR), Singapore, Singapore

Volume

32

Issue

4

fYear

2011

fDate

4/1/2011 12:00:00 AM

Firstpage

566

Lastpage

568

Abstract

In this letter, a significantly improved uniformity of device parameters (for cycle-to-cycle uniformity within one device and device-to-device uniformity), such as set voltage, reset voltage, and HRS and LRS resistance distributions, is successfully demonstrated on HfO_x/TiO_x multilayer (ML)-based resistive switching devices, as compared with HfO_x-based single-layer device. In addition, the reported ML devices are free from forming process, which is greatly beneficial from the viewpoint of RRAM circuit operation. It is believed that both the Ti doping effect and the confinement of conduction filament within different dielectrics layers contribute to the improvement.

Keywords

hafnium compounds; random-access storage; semiconductor doping; titanium compounds; HfO_x-TiO_x-HfO_x-TiO_x; RRAM circuit; RRAM devices; cycle-to-cycle uniformity; device parameter uniformity; filament confinement; multilayer-based resistive switching devices; single-layer device; titanium doping effect; Dielectrics; Dispersion; Doping; Electrodes; Electron devices; Resistance; Switches; $hbox{HfO}_{x}$; resistive random access memory (RRAM); uniformity;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2109033

Filename

5723692