DocumentCode
1464424
Title
An analytic expression of fmax for HBTs
Author
Kurishima, Kenji
Author_Institution
NTT LSI Labs., Atsugi, Japan
Volume
43
Issue
12
fYear
1996
fDate
12/1/1996 12:00:00 AM
Firstpage
2074
Lastpage
2079
Abstract
An analytic expression of fmax is derived based on a practical HBT circuit model where collector junction capacitance is split up into internal and external parts. It shows that for advanced HBTs, fmax is well characterized by the product of the base resistance and internal collector capacitance. In other words, the external collector capacitance has only a small impact on the determination of fmax. Good agreement between experimental results and numerical circuit simulation confirms the validity of the HBT circuit model. The influence of the external collector capacitance on maximum available gain is also described
Keywords
heterojunction bipolar transistors; semiconductor device models; HBT; base resistance; circuit model; collector junction capacitance; gain; maximum oscillation frequency; numerical simulation; Capacitance; Circuit simulation; Conductivity; Contact resistance; Cutoff frequency; Electrodes; Equivalent circuits; Heterojunction bipolar transistors; Large scale integration; Laser modes;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.544377
Filename
544377
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