DocumentCode :
1464424
Title :
An analytic expression of fmax for HBTs
Author :
Kurishima, Kenji
Author_Institution :
NTT LSI Labs., Atsugi, Japan
Volume :
43
Issue :
12
fYear :
1996
fDate :
12/1/1996 12:00:00 AM
Firstpage :
2074
Lastpage :
2079
Abstract :
An analytic expression of fmax is derived based on a practical HBT circuit model where collector junction capacitance is split up into internal and external parts. It shows that for advanced HBTs, fmax is well characterized by the product of the base resistance and internal collector capacitance. In other words, the external collector capacitance has only a small impact on the determination of fmax. Good agreement between experimental results and numerical circuit simulation confirms the validity of the HBT circuit model. The influence of the external collector capacitance on maximum available gain is also described
Keywords :
heterojunction bipolar transistors; semiconductor device models; HBT; base resistance; circuit model; collector junction capacitance; gain; maximum oscillation frequency; numerical simulation; Capacitance; Circuit simulation; Conductivity; Contact resistance; Cutoff frequency; Electrodes; Equivalent circuits; Heterojunction bipolar transistors; Large scale integration; Laser modes;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.544377
Filename :
544377
Link To Document :
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