• DocumentCode
    1464424
  • Title

    An analytic expression of fmax for HBTs

  • Author

    Kurishima, Kenji

  • Author_Institution
    NTT LSI Labs., Atsugi, Japan
  • Volume
    43
  • Issue
    12
  • fYear
    1996
  • fDate
    12/1/1996 12:00:00 AM
  • Firstpage
    2074
  • Lastpage
    2079
  • Abstract
    An analytic expression of fmax is derived based on a practical HBT circuit model where collector junction capacitance is split up into internal and external parts. It shows that for advanced HBTs, fmax is well characterized by the product of the base resistance and internal collector capacitance. In other words, the external collector capacitance has only a small impact on the determination of fmax. Good agreement between experimental results and numerical circuit simulation confirms the validity of the HBT circuit model. The influence of the external collector capacitance on maximum available gain is also described
  • Keywords
    heterojunction bipolar transistors; semiconductor device models; HBT; base resistance; circuit model; collector junction capacitance; gain; maximum oscillation frequency; numerical simulation; Capacitance; Circuit simulation; Conductivity; Contact resistance; Cutoff frequency; Electrodes; Equivalent circuits; Heterojunction bipolar transistors; Large scale integration; Laser modes;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.544377
  • Filename
    544377