High-density and high-quality frame transfer CCD imager with very low smear, low dark current, and very high blue sensitivity

Author

Hagiwara, Yoshiaki

Author_Institution

SC Logic MCU Bus. Dept., Sony Corp., Atsugi, Japan

Volume

43

Issue

12

fYear

1996

fDate

12/1/1996 12:00:00 AM

Firstpage

2122

Lastpage

2130

Abstract

When the channel width of an FET becomes of the same order of magnitude as the depth of the gate depletion region, an increase of the threshold voltage is observed. This narrow channel effect has been applied successfully in creating an asymmetric potential well under an electrode for two-phase CCD operation. The feasibility of this structure has been confirmed in a 242-element analog delay line. The application is now extended to a 800 H×492 V frame transfer-type buried channel CCD imager with 14.31818 MHz frame shift, which results in a very low smear level of 0.01%, which is good enough for low-cost multimedia video camera applications

Keywords

CCD image sensors; FET; analog delay line; asymmetric potential well; blue sensitivity; dark current; frame transfer buried channel CCD imager; multimedia video camera; narrow channel effect; smear; threshold voltage; two-phase operation; CMOS image sensors; CMOS logic circuits; CMOS process; Capacitance; Charge coupled devices; Charge transfer; Charge-coupled image sensors; Clocks; Delay lines; Electrodes; FETs; Helium; Potential well; Random access memory; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.544383

Filename

544383