Title :
Interpretation of the static and dynamic characteristics of 1-D thin film position sensitive detectors based on a-Si:H p-i-n diodes
Author :
Martins, Rodrigo F.P. ; Fortunato, Elvira M.C.
Author_Institution :
Dept. of Mater. Sci., New Univ. of Lisbon, Portugal
fDate :
12/1/1996 12:00:00 AM
Abstract :
In this work, we present a model to interpret the steady-state and the dynamic detection limits of 1-D Thin Film Position Sensitive Detectors (1-D TFPSD) based on p-i-n a-Si:H devices. From this, an equivalent electric circuit is derived and the predicted values are compared with the experimental results obtained in 1-D TFPSD devices, with different sizes. The model is also able to determine the device characteristics that influence the spatial limits and the response time of the device
Keywords :
amorphous semiconductors; elemental semiconductors; equivalent circuits; hydrogen; p-i-n photodiodes; photodetectors; position measurement; semiconductor device models; silicon; thin film devices; 1D thin film position sensitive detector; Si:H; a-Si:H p-i-n diode; dynamic characteristics; equivalent electric circuit; model; static characteristics; Circuits; Conductivity; Delay; Electrodes; Inspection; Materials science and technology; PIN photodiodes; Position sensitive particle detectors; Steady-state; Thin film circuits; Thin film devices; Transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
