Interpretation of the static and dynamic characteristics of 1-D thin film position sensitive detectors based on a-Si:H p-i-n diodes

Author

Martins, Rodrigo F.P. ; Fortunato, Elvira M.C.

Author_Institution

Dept. of Mater. Sci., New Univ. of Lisbon, Portugal

Volume

43

Issue

12

fYear

1996

fDate

12/1/1996 12:00:00 AM

Firstpage

2143

Lastpage

2152

Abstract

In this work, we present a model to interpret the steady-state and the dynamic detection limits of 1-D Thin Film Position Sensitive Detectors (1-D TFPSD) based on p-i-n a-Si:H devices. From this, an equivalent electric circuit is derived and the predicted values are compared with the experimental results obtained in 1-D TFPSD devices, with different sizes. The model is also able to determine the device characteristics that influence the spatial limits and the response time of the device

Keywords

amorphous semiconductors; elemental semiconductors; equivalent circuits; hydrogen; p-i-n photodiodes; photodetectors; position measurement; semiconductor device models; silicon; thin film devices; 1D thin film position sensitive detector; Si:H; a-Si:H p-i-n diode; dynamic characteristics; equivalent electric circuit; model; static characteristics; Circuits; Conductivity; Delay; Electrodes; Inspection; Materials science and technology; PIN photodiodes; Position sensitive particle detectors; Steady-state; Thin film circuits; Thin film devices; Transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.544385

Filename

544385