Failure analysis of bond pad metal peeling using FIB and AFM

Author

Tan, Cher Ming ; Er, Eddie ; Hua, Younan ; Chai, Vincent

Author_Institution

Department of Electrical and Electronic Engineering, Microelectronic Division, Nanyang Technological University, Singapore 639798

Volume

21

Issue

4

fYear

1998

Firstpage

585

Lastpage

591

Abstract

Aluminum bond pads on semiconductor chips play an important role in chips functionality and reliability. Bond pad peeling during wire bonding process results in yield reduction. The failure mechanisms of the peeling must be identified so that potential reliability problem of poor bond pad adhesion can be avoided. In this work, FIB, SEM, EDX, and AFM are used to identify the root causes of the peeling. The possible root causes are found to be the presence of an extra layer of thickness of 0.14 μm and the poly-silicon surface roughness asperity due to prolonged BOE etching time.

Keywords

circuit-breaking arcs; electrical contacts; mass transfer; wear; 14 V; 20 to 80 A; Ag; AgCdO; AgCu; AgNi; AgSnO/sub 2/; Cu; anodic to cathodic arc transition; break arc lengthening; contact material erosion; electron mean free path; mass transfer; relay; switch; Cathodes; DC motors; Electrons; Gain measurement; Lamps; Length measurement; Loss measurement; Relays; Silver; Switches; AFM; EDX; FIB; SEM; bond pad; failure analysis;

fLanguage

English

Journal_Title

Components, Packaging, and Manufacturing Technology, Part A, IEEE Transactions on

Publisher

ieee

ISSN

1070-9886

Type

jour

DOI

10.1109/95.740051

Filename

740051