Temperature dependent common emitter current gain and collector-emitter offset voltage study in AlGaN/GaN heterojunction bipolar transistors

Author

Huang, J.J. ; Hattendorf, Michael ; Feng, Milton ; Lambert, D.J.H. ; Shelton, B.S. ; Wong, M.M. ; Chowdhury, U. ; Zhu, T.G. ; Kwon, H.K. ; Dupuis, R.D.

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

Volume

22

Issue

4

fYear

2001

fDate

4/1/2001 12:00:00 AM

Firstpage

157

Lastpage

159

Abstract

We have demonstrated state-of-the-art performance of AlGaN/GaN heterojunction bipolar transistors (HBTs) with a common emitter (CE) current gain of 31 at 175 K and 11.3 at 295 K. The increase in collector current and CE current gain at lower temperature can be attributed to the reduced base-emitter interface recombination current. We also observed an increase of collector-emitter offset voltage with decrease of temperature. The increase of V/sub CEOFF/ at lower temperature is related to an increase of V/sub BE/ as the base bulk current is increased, or to the reduction of the ideality factor n/sub BE/.

Keywords

III-V semiconductors; aluminium compounds; electron-hole recombination; gallium compounds; heterojunction bipolar transistors; semiconductor device measurement; wide band gap semiconductors; 175 K; 295 K; AlGaN-GaN; AlGaN/GaN HBT; base bulk current; base-emitter interface recombination current; collector-emitter offset voltage; common emitter current gain; graded emitter HBT; ideality factor; temperature dependence; Aluminum gallium nitride; Bipolar transistors; Gallium nitride; Heterojunction bipolar transistors; MOCVD; Microelectronics; Performance gain; Radiative recombination; Temperature dependence; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.915594

Filename

915594